Dr. Siegfried Karg is a Research Staff Member at IBM Research – Zurich since 2000. He holds a Ph. D. degree in physics obtained from Univ. Bayreuth (Germany) in 1995. He held positions as post-doctoral scientist at IBM Research – Almaden (1995-1996) and as research assistant at Darmstadt Univ. of Technology (1997-1999). He worked on the physics and materials science of organic and polymer devices (OLEDs, OFETs and electrochemical cells). Moreover, Siegfried Karg has conducted research on memory applications such as resistive oxide RAM and, most recently, on capacitorless eDRAM based on III-V semiconductor transistors. Moreover, he investigated the one-dimensional electronic properties of InAs nanostructures. His current research fields include also brain-inspired computing applications exploiting oscillatory neural networks (with electronic oscillators based on the metal-insulator transition of VO2). S. Karg has authored about 100 scientific publications and holds more than 30 patents.